Designing GaN HEMT for Receiving Devices
Теги: cryogenic measurements gallium arsenide gallium nitride hemt low-noise amplifier noise factor small-signal model
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In the past few years a great number of electronic components research and design laboratories for ground and space wireless communications have been focused on the research and applicaion of AlGaN/GaN heterostructure-based devices. In this work we tried to present our results in comparison of GaN HEMT and GaAs pHEMT technologies from the point of their application in LNAs. Also we demonstrated the method of GaN HEMT small signal model extraction. Two types of HEMT topologies were used to design and produce LNAs. The results of NF and Gain measurements at room and cryogenic temperatures of these LNAs are also demonstrated in this article.