New solution for ion implantation developed by IBS
First, FLEXion allows implantation of singly charged ions with energies up to 400 keV, which is twice as high as in the equipment of IMC series. I consider this value to be the maximum for practical use, since a further increase in energy will lead to high heating and the appearance of strong X-ray radiation. Secondly, if earlier in our equipment the mass resolution M/ΔM was 100 units, now it is increased to 150. In this case, FLEXion allows to implant most of the elements of the periodic table. The third advantage of the new system is the extended lifetime of the ion source between services. If earlier this period did not exceed 40 hours, now, thanks to a new design with placement of the cathode outside the ionization chamber, it reaches 300 hours. And, finally, the fourth advantage of the new model is about 20% higher ion beam current. It should be specially noted that, along with expanded features and improved capabilities, the new model has a lower price than that of competitors' equipment.
FLEXion is optimal for scientific research, development of new devices, prototyping, production of small and medium series of products. One such system has already been installed, the second will be put into operation in China, the third – in India.
What are the areas of development of IBS' equipment and technologies?
One of our goals is to become a leading supplier of ion implantation systems for the production of silicon carbide devices. This segment of the market is relatively small, but it has a stable tendency to grow, and after 2020 its development can dramatically accelerate. At the same time, the production of silicon carbide devices is characterized by special requirements for equipment and technologies, which detaches this niche and makes it less interesting for developers of equipment that focus on large fabs and mass production. We are ready to offer really effective solutions for ion doping of silicon carbide, including, on the basis of the new FLEXion platform.
The second interesting area for us is the ion implantation of 3D structures. Traditional ion implantation technologies are oriented to planar systems, and when dealing with three-dimensional structures they face a number of problems. We have experience in creating equipment based on plasma immersion ion implantation, which allows you to control the doping process, including in the side walls of complex nanostructures.
I think that these areas will provide new impulses for the development of both the industry as a whole and our company.
How do you assess the prospects for the development of the Russian semiconductor market?
I believe that Russian enterprises are unlikely to be competitive in the mass production of consumer electronics devices, so they should focus their efforts on high-tech solutions. Russia is one of the world leaders in semiconductor research, and the development of new devices based on modified materials can become a truly breakthrough area. We and our partners – TechnoInfo Ltd. will do our best to promote the development of scientific institutes and enterprises of Russian micro- and nanoelectronics.
Interview: Dmitry Gudilin