The continuous technology node scaling of Si microelectronics prompts to face with new difficulties in the formation of nanoscale ion-implanted regions. Starting from a certain size the formation of such regions goes under strong electrical and mechanical fields associated with the presence of a masking layer. In this paper, we perform numerical evaluations of size factors wherein the action of force fields is significant and require corrections in the design of Si microelectronics devices.

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Разработка: студия Green Art