DOI: https://doi.org/10.22184/1993-8578.2023.16.5.298.305

A technological simulation of a MOS transistor exposed to a heavy ion has been carried out. A hypothesis about linear dependence of the collected charge in the device on the magnitude of linear energy transfer of a particle hitting it is proposed and tested. The most sensitive to radiation exposure areas of the considered transistor are determined.

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Разработка: студия Green Art