rus
Issue #5/2023
А.А.Glushko, М.R.Gusev, V.V.Makarchuk
RESEARCH OF THE DEPENDENCE OF THE COLLECTED CHARGE IN A MOS TRANSISTOR ON LINEAR ENERGY TRANSFER OF HEAVY IONS
RESEARCH OF THE DEPENDENCE OF THE COLLECTED CHARGE IN A MOS TRANSISTOR ON LINEAR ENERGY TRANSFER OF HEAVY IONS
DOI: https://doi.org/10.22184/1993-8578.2023.16.5.298.305
A technological simulation of a MOS transistor exposed to a heavy ion has been carried out. A hypothesis about linear dependence of the collected charge in the device on the magnitude of linear energy transfer of a particle hitting it is proposed and tested. The most sensitive to radiation exposure areas of the considered transistor are determined.
Tags: cmos technology heavy ions technological cad vlsi кмоп-технология сбис технологическая сапр тяжелые заряженные частицы
Subscribe to the journal Nanoindustry to read the full article.
A technological simulation of a MOS transistor exposed to a heavy ion has been carried out. A hypothesis about linear dependence of the collected charge in the device on the magnitude of linear energy transfer of a particle hitting it is proposed and tested. The most sensitive to radiation exposure areas of the considered transistor are determined.
Tags: cmos technology heavy ions technological cad vlsi кмоп-технология сбис технологическая сапр тяжелые заряженные частицы
Subscribe to the journal Nanoindustry to read the full article.
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