National microelectronics: expectations and prospects As the anniversary of Institute – the leader of national micro- and nanoelectronics, approaches, the Institute management shares with the readers the latest developments, leading competencies and development prospects of the Institute, tells about the work of the Consortium of leading enterprises and organizations of the industry as well as describes its experience in training high-end professionals capable of solving problems that the national microelectronic industry face.
Synthesis of German and Russian engineering schools Less than five years ago, DEAXO began working in the engineering services market, having managed to successfully implement several large-scale projects in the field of construction of factories and laboratories for the domestic microelectronic industry in a short time. In particular, DEAXO successfully created in Russia production facilities for INME RAS and the Russian division of NeoPhotonics Corporation. The company regularly participates in the SEMIEXPO Russia exhibition, and the current year was no exception. Pavel Didenko, contract management director (right in the photo), Evgeny Klyusov, sales manager (left in the photo), and Vladimir Uzdovskiy, engineer for gas supply, became our interlocutors at the DEAXO booth.
TBS presents the new partner, TRYMAX At the initiative of TBS*, on October 9, 2018, was held a seminar of a new foreign partner, Trymax** (the Netherlands), the recognized leader in equipment manufacturing for the semiconductor industry. The presenters of the company have told about products for plasma-chemical processing of plates, removing of photoresist by isotropic cleaning of surfaces by isotropic etching used in a wide spectra of crystal manufacturing, as well as MEMS, integrated circuits, UHF and other devices. Representatives of the company Paul Simpson and Jann Guillow spoke about Trymax products and solutions, the prospects for its entry into the Russian market in partnership with TBS and answered questions from guests, among whom were engineers of leading enterprises of the industry and business representatives. The interest was caused by the plasma treatment equipment NEO 200 for photoresist removing, etching, stripping plates, capable of processing substrates up to 200 mm. Compactness, low cost and a semi-automatic loading station allows it to be used in innovative centers of advanced development of nanoindustry as a powerful tool for the development of high-tech manufactures. At the end, employees of the TBS company outlined a plan for organizing events in 2019.
Transparent diamond probe for nanoindentation The advantages of the nanoindentation, such as the speed of testing, the simplicity of sample preparation, the non-destructive principle of control, make it effective for studying a wide class of materials. Heterogeneous samples often require observation of their mechanical properties in local areas of the surface. In this regard, there is a need for precise positioning of the indenter using a transparent tip. An indenter made of transparent material, in addition to direct observation of the measurement area, allows radiation exposure of selected area of the sample. If there are no impurities and defects in the crystal from which the indenter is made, the radiation beam does not lose its intensity. The paper demonstrates the possibilities of observing the surface of a sample through an indenter, using liquid-crystal screens of electronic devices as an example. The image of individual pixels that passed through the indenter is resolved with great accuracy, and objects of tens of microns are distinguishable even without reaching the limit resolution of the microscope.
Femtoscan online software and visualization of nano-objecs in high-resolution microscopy The developed FemtoScan Online software allows a variety of processing of experimental high-resolution microscopy data (probe, electron and optical microscopy) using original techniques.
Picosun equipment for synthesis of ultrathin films by atomic layer deposition technology The history of development, basical principles, advantages and limitations of atomic layer deposition (ALD), as well as Picosun equipment for R&D and microelectronic industry are considered.
Nano-lathe Improving the quality of manufacturing of individual parts ensures the growth of competitiveness of the products assembled from them. In such industries as aerospace, instrument-making, automotive, bearing industries, the requirements for equipment accuracy and reliability are constantly increasing. Nanometer accuracy is the goal to which mechanical engineering has been striving for the last few decades.
Hiding know-how in patents for inventions Based on examples of patents for high-tech inventions, methods of protecting know-how are considered. Among them: indication of extended ranges of values of process parameters and device characteristics; hiding the technology of manufacturing of the signify elements; masking significant features by transferring them to the claims without focusing on their technical results in the description of the invention. The importance of patenting military technologies is noted.
Micro- and nanosystems industry: from import substitution to technological sovereignty The dominant factor determining the development of Russia in the conditions of global competition is the "technological breakthrough" as a strategic vector of positioning the state in the markets of military and civilian products in order to protect its vital interests and move to a new techno-economic paradigm. In the system of ensuring technological security of Russia in the existing and forecasted system of relations, including taking into account the priorities of the so-called "digital economy", the basic element of "soft power" is undoubtedly the intellectual potential of the nation, innovation and competitiveness of micro- and nanoindustry products. All of the above is integrated within the concept of "scientific and technological sovereignty". In the context of globalization, the reduction of sovereignty is inevitably. While intellectual isolation leads to stagnation, it is necessary to provide leadership in areas that determine global independence, parity and superiority.
Flexible printing compositions as basic element of future electronics The paper considers the problems of the development of conductive printing compositions for elastic substrates, a key element of an innovative flexible and stretchable electronics, as well as the basis for creating "smart clothes". It is noted that, from the point of view of the printing process, elastic materials can be divided into two groups: impermeable for printing composition and textile cloths having a porous, ink-permeable structure. To obtain conductive paths on impermeable and non-absorbent materials, a two-phase system of solvents and surfactants has been developed, which allows forming a surface conductive zone enriched with silver nanoparticles inside the printed layer. This provides an increase in conductivity without increasing the proportion of the conductive component and achieves good elasticity of the printed path due to the formation of a layer of almost pure elastomer. For woven textiles, a technology has been developed for applying conductive paths using a high-penetrating solvent and a two-stage drying mode, which provides deep impregnation of individual structural elements of the fabric without binding them and filling cavities. The obtained indicators of the surface resistance of conductive paths are comparable with the known analogues and surpass them in mechanical and operational properties. The developed printed compositions allow to create of EMG electrodes, RFID tags and antennas integrated directly into the clothing elements.
Physical features of formation of local submicron ion-implanted regions The continuous technology node scaling of Si microelectronics prompts to face with new difficulties in the formation of nanoscale ion-implanted regions. Starting from a certain size the formation of such regions goes under strong electrical and mechanical fields associated with the presence of a masking layer. In this paper, we perform numerical evaluations of size factors wherein the action of force fields is significant and require corrections in the design of Si microelectronics devices.