The continuous technology node scaling of Si microelectronics prompts to face with new difficulties in the formation of nanoscale ion-implanted regions. Starting from a certain size the formation of such regions goes under strong electrical and mechanical fields associated with the presence of a masking layer. In this paper, we perform numerical evaluations of size factors wherein the action of force fields is significant and require corrections in the design of Si microelectronics devices.


Разработка: студия Green Art