In case of acoustic wave filters, surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, the quality depends a lot on the dimensions of several layers, hence an adjustment regarding homogeneity in sub-nm range has to be guaranteed. Within the article a technology of space-resolved correction of device wafer is described. The correction takes place due to a focused broad ion beam and a movement of wafer in front of it.


Разработка: студия Green Art