Conditions for the formation of structures of sensitive elements with given electrophysical properties for creating film transducers are considered. The obtaining of materials with predetermined properties and thin films of chalcogenides of the elements of the first group with the reproduction of the parameters of the compounds of the starting material on the film was studied. The technology of creating film transducers with specified characteristics is compatible with other processes of microelectronics and provides constructive and technological compatibility of the elements of transducers.


Разработка: студия Green Art