Paper reports on features of SiC epitaxial growth in 4H–SiC vertical power MOSFET fabrication technology: for the drift layer formation and electrical properties optimization of the transistor channel. SiC components of power electronics have several advantages in comparison with traditional silicon ones. These components are characterized by higher electrical breakdown voltage, low active area resistance, high operating frequency, low losses at switching, high values of peak operating temperature and switching power density. Technologies of volume and epitaxial growth are the elements which enabled to create an electronic component basis for the 4H–SiC-based power electronics. Improvement of the epitaxial growth technology and quality of substrates permit to prepare instrument structures that demonstrate an advantage of SiC as the material of power electronics compared to other semiconductors.


Разработка: студия Green Art