Investigation of the side walls roughness effect of the Si3N4 lightguide layer of different thickness on optical losses in an integral waveguide formed on a quartz substrate
This article presents results of the influence of the side walls roughness of the 100 nm and 200 nm silicon nitride. Calculation of the main parameters of the side walls roughness of the lightguide layer, which have the greatest effect on the optical loss in the waveguide, carried out by finite difference time domain method (FDTD), is presented. Based on this calculation, the optimal thickness of the lightguide layer of nitride was established, allowing the light flow to be retained. Calculation of the model was based on the data obtained during the study of SEM images of manufactured waveguide structures. The results of these calculations are consistent with the data obtained using optical frequency domain reflectometry (OFDR) in the optical backscatter reflectometer (OBR) of manufactured waveguides with a thickness of silicon nitride 200 nm and width of 3 µm and 8 µm.
Tags: integrated optical waveguide structure integrated optics optical loss photonics reflectometry roughness рефлектометрия silicon nitride silicon technology интегральная оптика интегрально-оптические волноводные структуры кремниевая технология нитрид кремния оптические потери фотоника шероховатость
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