An assessment of the current status and key trends in the millimetre microwave device development technology on wide-band heterostructures (Al, Ga, In)N/GaN shows that the technology level achieved in the Institute of Ultra-High-Frequency Semiconductor Electronics of the Russian Academy of Sciences (IUHFSE RAS) is quite in line with the global trends and developments. This creates prerequisites for the establishment and development of the industrial production of monolithic integrated circuits (MIC) in Russia for the Ka-, V- and W- band frequency receive/transmit systems exceeding by their parameters the microwave devices on arsenide heterostructures


Разработка: студия Green Art