The method developed by Leningrad Electrotechnical Institute of growing 3D silicon carbide mono-crystals (the LETI method) is an internationally recognized scientific and technological breakthrough. It determined the worldwide transition to the industrial manufacture of electronic components based on silicon carbide (SiC). Silicon carbide is used in the manufacture of optoelectronics, microwave electronics and, of course, power electronics due to the extremal characteristics of this wide-gap semiconductor, such as its thermal conductivity, critical tension of the electric field and drift velocity of charge carriers, resistance to high temperatures, chemically aggressive environments and radiation.


Разработка: студия Green Art