SOI CMOS technology has an absolute advantage over wide band gap semiconductors, memory cells like MRAM and FRAM especially for the development of super-large-scale integrated circuits of memory, microprocessors and systems on a chip for maximum operating temperatures up to 250–300 °C. In the work, I–V characteristic of transistors, switching and time characteristics of trigger memories and ring generators were investigated. A series of experiments was also carried out to study the influence of the temperature on the transistors and design techniques. Based on the data we have investigated, it is shown that a temperature change up to 250 °C causes not only an increase in leakage currents by 3–4 orders of magnitude, but also the impact ionization and the kink effect. Experimental studies of ring generators have shown that when the temperature varies from 25 ° C to 200 °C, the generation frequency decreases by a factor of 1.5, the static current of consumption increases by three orders of magnitude (up to 0,5 μA), and the dynamic current of consumption increases by 40 %.The research of test structures of trigger memory elements, showed unconditional shift to the left with decreasing critical points for families of switching characteristics. In general, the noise immunity of memory cells in the investigated temperature range varies insignificantly — up to 10 %, which makes it possible to conclude that it is possible to build static memory blocks in high-temperature microprocessors without fundamental changes in circuitry. So on, the conclusion is made on the principle possibility of creating microprocessor systems based on the developed circuit elements for operating temperatures up to 300 °C.


Разработка: студия Green Art