The results of the research of the reference model for SGMOS (split gate MOS) are presented. It is shown that the use of a split gate is quite effective in modulation-doped structures with the periodically doped channel. Decrease in the steepness, speed, and change in the I–V characteristic of transistor structures is not catastrophic, up to temperatures of 200–250 °C.


Разработка: студия Green Art