Investigations of thin-film microelectronic structures of low-k dielectrics and TiN diffusivebarrier layers using proposed complex of X-ray methods, particularly, reflectometry and diffused scattering have been accomplished. The advantages of this approach are that it allows of resolving ambiguities, such as "density-roughness" appeared at solving of inverse X-ray problems, identifying features of the studied structures formation and developing an analytical complex combined by self-consistent processing of the data obtained by several measurement methods in practice. In future, it is planned to adapt it to X-ray spectral and X-ray diffraction analysis methods to study the elemental and phase composition of objects, including the analysis of ore minerals.


Разработка: студия Green Art