The problems and methods for the quantitative characterization of the conformality of thin films on the surfaces of high-aspect ratio nanostructures during atomic layer deposition (ALD) are considered. The author develops the previously proposed methodology for analyzing the conformity of thin films by chemical vapor deposition (CVD) and plasma-enhanced deposition (PECVD), and ALD. The methodology proposed by the author allows to perform an adequate assessment and quantitative comparison of the results for the device structures of varying complexity using different kinds and conditions of ALD method.


Разработка: студия Green Art