rus
Special Issue/2019
V. I. Egorkin, M. N. Zhuravlev, V. E. Zemlyakov
Heterobipolar transistor with high breakdown voltage based on GaAs compounds nanoheterostructures
Heterobipolar transistor with high breakdown voltage based on GaAs compounds nanoheterostructures
The paper highlights the possibility of increasing the breakdown voltage of a heterobipolar transistor on the basis of gallium arsenide compounds. The breakdown voltage increase has been achieved due to the use of anisotropic chemical etching and plasma-chemical treatment with deposition of Si3N4. The value of the breakdown voltage is more than 25 V.
The paper highlights the possibility of increasing the breakdown voltage of a heterobipolar transistor on the basis of gallium arsenide compounds. The breakdown voltage increase has been achieved due to the use of anisotropic chemical etching and plasma-chemical treatment with deposition of Si3N4. The value of the breakdown voltage is more than 25 V.
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