Functional methods of VSET and ROFF stabilization for RеRAM memory cells based on hafnium oxide
This paper presents the results of applying functional methods of stabilization for main characteristics of ReRAM non-volatile memory cells. Two group of methods have been examined: impulse and DC-methods, it is shown that all methods from both groups lead to stabilization of Vset, and impulse methods also reduce the scatter of Roff. Advantages and disadvantages of every method are represented, statistical analysis of results has been carried out. Then the efficiency of all methods have been compared as well as phenomenological model illustrating processes in MIM during reset.