The paper deals with using an AlN buffer layer grown at extremely high temperatures (up to 1150 °C) in combination with AlN/AlGaN superlattices at the Russian STE3N MBE System using ammonia as a nitrogen source, which allows drastically improving the structural quality of active GaN layers (dislocation density reduced to 9 ⋅ 108–1 ⋅ 109 cm−2, as well as increasing the mobility of electrons in the GaN/AlGaN channel to 2000 cm2/V⋅s, and providing the device-level quality of heterostructures for microelectronics.


Разработка: студия Green Art