Element-technological and constructive integration when creating microelectronic instrument structures
In the technological process of manufacturing microelectronic device structures (MDS), especially in production with submicron minimum dimensions, the relationship between the parameters of device structures and the technology for their manufacture is strengthened. Physical and technological modeling allows predicting the characteristics of MDS structures and establishing correlations of technological and electrical parameters of elements, the possibility of their optimal design.
The existing limitations of circuit and system engineering when creating integrated electronics elements that significantly affect the foundations of technology are increasingly determined by metallized interconnects [1, 2]. Technological equipment used in integrated electronics technology is closely linked to advances in metallization technology. One of the characteristic features of the development of large elements of integrated electronics, in particular logical matrix type, was the increasing role of interconnections of elements.
Structural and technological integration in the creation of microelectronic instrument structures. Elements of integrated electronics are considered as a set of active elements interacting through interconnects (a system of signal conductors). The active element is the main component of integrated electronics. The relationship between the active element – the transistor structure and the technology of its manufacture is the essence of developments with submicron sizes, focused on achieving ultra-fast performance and the degree of integration of the element-technological and structural base.
- physical limitations;
- alternatives to design decisions;
- optimization of the process.
When developing instrument structures and elements of integrated electronics, it is necessary to know the physical distribution of impurities (technological modeling), and take into account the influence of impurity profiles on the electrical characteristics of the device (physical and technological modeling). Modeling of the manufacturing technology of instrument structures provides an imitation of the behavior of integrated electronics elements under operating conditions and calculation of their electrical characteristics and parameters. It allows you to reduce the design time of devices, and at the same time increase the likelihood of optimizing technology modes, geometric dimensions, designs of elements of integrated electronics, to achieve optimal performance technologies for this level and degree of integration.
The measurement of electrical and electrophysical parameters of structures is laborious and is characterized by a significant error. In this regard, the use of methods of physical and technological modeling to identify the electrical parameters of instrument structures in establishing feedback between the characteristics of the device and its manufacturing technology is optimal.
The application of modeling technology and instrument structures in the manufacture of integrated electronics provides: accuracy, speed, system integrability and service capabilities. The exact determination of the profile parameters of impurities and the electrical parameters of instrument structures becomes dominant as the size of the elements decreases.
Application of methods of physical and technological modeling for submicron elements of integrated electronics – determination and establishment of physical limitations and limits, critical functional characteristics and parameters for the design and manufacture of instrument structures.
Physicotechnological modeling allows us to study the tolerances in the technology and identify the dominant factors that can affect the manufacturing process of integrated electronics and output. It is also possible to use technological models as effective controllers of technological equipment and to conduct real-time modeling using computer equipment used in process control.
The need for process control requires the integration of methods of physical and technological design of submicron thin-layer instrument structures. At the system level, with a high degree of integration, modeling of technology and instrument structures is necessary.
When modeling technologies, aspects of manufacturing elements of integrated electronics are taken into account. The simulation results of the technological process together with the values of electrical modes, electrophysical constants, etc. represent the initial data for modeling instrument structures, which calculate their most important electrophysical and electrical characteristics.
Thus, multi-level modeling of integrated electronics allows accurate prediction of their characteristics. All this leads to effective control and correlation of technological and electrical parameters of elements and devices, the possibility of optimal design of elements of integrated electronics.
In the technological process of manufacturing elements, especially in production with submicron minimum dimensions, the relationship between the parameters of instrument structures and the technology for their manufacture is strengthened. Physicotechnological modeling in the development of a promising elementary technological and structural base is becoming topical.
For the successful implementation of physical and technological modeling it is necessary to use modern equipment that allows you to measure various structural and electrophysical parameters of semiconductor materials: secondary-ion mass spectrometers, scanning electron microscopes, etc. To a greater extent, this relates to the modeling of technological processes, where without reliable metrics it is impossible to create new and modify practically used models.
In the technological process of manufacturing instrument structures with submicron sizes, the relationship between the parameters of instrument structures and the technology for their manufacture is strengthened. Multilevel modeling of integrated electronics elements allows us to predict their characteristics, effective control and correlation of technological and electrical parameters of elements, the possibility of their optimal design. ■