Development of technology of nanostructures with a spin-tunnel magnetoresistive effect
The results of experimental studies of multilayer nanostructures producing with spin-tunnel magnetoresistive (STMR) effect are presented. When STMR nanostructures were formed using integrated technology, the STMR effect increased up to 157.5%.
Tags: microelectronics multilayer nanostructures producing with spin-tunnel magnetoresi микроэлектроника многослойные наноструктуры со спин-туннельным магниторезистивным
Subscribe to the journal Nanoindustry to read the full article.